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IXGH24N120C3 Технические параметры

IXYS  IXGH24N120C3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 20A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series GenX3™
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number IXG*24N120
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 250W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 48A
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 1.9nF
Turn On Time 41 ns
Vce(on) (Max) @ Vge, Ic 4.2V @ 15V, 20A
Turn Off Time-Nom (toff) 430 ns
IGBT Type PT
Gate Charge 79nC
Current - Collector Pulsed (Icm) 96A
Td (on/off) @ 25°C 16ns/93ns
Switching Energy 1.16mJ (on), 470μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXGH24N120C3 Документы

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