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IXGH28N120BD1 Технические параметры

IXYS  IXGH28N120BD1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.500007g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 960V, 28A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*28N120
Pin Count 3
Свойство продукта Значение свойства
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Reverse Recovery Time 40 ns
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 63 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 28A
Turn Off Time-Nom (toff) 590 ns
IGBT Type PT
Gate Charge 92nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 30ns/210ns
Switching Energy 2.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
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IXGH28N120BD1 Документы

IXGH28N120BD1 brand manufacturers: IXYS, Anli stock, IXGH28N120BD1 reference price.IXYS. IXGH28N120BD1 parameters, IXGH28N120BD1 Datasheet PDF and pin diagram description download.You can use the IXGH28N120BD1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IXGH28N120BD1 pin diagram and circuit diagram and usage method of function,IXGH28N120BD1 electronics tutorials.You can download from the Anli.