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IXGH32N120A3 Технические параметры
IXYS IXGH32N120A3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 30 Weeks | |
| Package / Case | TO-247-3 | |
| Mounting Type | Through Hole | |
| Mount | Through Hole | |
| Number of Pins | 3Pins | |
| Weight | 6.500007g | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Published | 2011 | |
| Series | GenX3™ | |
| Packaging | Tube | |
| Operating Temperature | -55°C~150°C TJ | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Max Power Dissipation | 300W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 300W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 75A | |
| JEDEC-95 Code | TO-247AD | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Input Capacitance | 2.15nF | |
| Turn On Time | 239 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 32A | |
| Turn Off Time-Nom (toff) | 1380 ns | |
| IGBT Type | PT | |
| Gate Charge | 89nC | |
| Current - Collector Pulsed (Icm) | 230A | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 5V | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
IXGH32N120A3 Документы
- DatasheetsIXG(H,T)32N120A3
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