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IXGH40N120C3D1 Технические параметры

IXYS  IXGH40N120C3D1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 30A, 3 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series GenX3™
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 380W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number IXG*40N120
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation 380W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 4.4V
Max Collector Current 75A
Reverse Recovery Time 100ns
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 52 ns
Vce(on) (Max) @ Vge, Ic 4.4V @ 15V, 30A
Turn Off Time-Nom (toff) 475 ns
IGBT Type PT
Gate Charge 142nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 17ns/130ns
Switching Energy 1.8mJ (on), 550μJ (off)
RoHS Status ROHS3 Compliant

IXGH40N120C3D1 Документы

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