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IXGH50N120C3 Технические параметры

IXYS  IXGH50N120C3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 40A, 2 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series GenX3™
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 460W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 460W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 4.2V
Max Collector Current 75A
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 55 ns
Vce(on) (Max) @ Vge, Ic 4.2V @ 15V, 40A
Turn Off Time-Nom (toff) 485 ns
IGBT Type PT
Gate Charge 196nC
Current - Collector Pulsed (Icm) 250A
Td (on/off) @ 25°C 20ns/123ns
Switching Energy 2.2mJ (on), 630μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant

IXGH50N120C3 Документы

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