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IXGH60N60 Технические параметры

IXYS  IXGH60N60 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.500007g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 60A, 2.7 Ω, 15V
Turn Off Delay Time 30 ns
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 600V
Max Power Dissipation 300W
Current Rating 75A
Base Part Number IXG*60N60
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 300W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 50 ns
Transistor Application POWER CONTROL
Rise Time 25ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
JEDEC-95 Code TO-247AD
Turn On Time 75 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 60A
Turn Off Time-Nom (toff) 1200 ns
IGBT Type PT
Gate Charge 130nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 50ns/300ns
Switching Energy 8mJ (off)
Gate-Emitter Voltage-Max 20V
VCEsat-Max 1.8 V
Gate-Emitter Thr Voltage-Max 5V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IXGH60N60 Документы

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