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IXGH60N60C3D1 Технические параметры

IXYS  IXGH60N60C3D1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 40A, 3 Ω, 15V
Turn Off Delay Time 70 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series GenX3™
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Max Power Dissipation 380W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*60N60
Pin Count 3
JESD-30 Code R-PSFM-T3
Свойство продукта Значение свойства
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 21 ns
Power - Max 380W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 75A
Reverse Recovery Time 25 ns
JEDEC-95 Code TO-247AD
Turn On Time 64 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Turn Off Time-Nom (toff) 226 ns
IGBT Type PT
Gate Charge 115nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 21ns/70ns
Switching Energy 800μJ (on), 450μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 95ns
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXGH60N60C3D1 Документы

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