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IXGH64N60A3 Технические параметры

IXYS  IXGH64N60A3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 50A, 3 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series GenX3™
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Свойство продукта Значение свойства
Max Power Dissipation 460W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 460W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.35V
Turn On Time 65 ns
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 50A
Turn Off Time-Nom (toff) 777 ns
IGBT Type PT
Gate Charge 167nC
Current - Collector Pulsed (Icm) 400A
Td (on/off) @ 25°C 26ns/268ns
Switching Energy 1.42mJ (on), 3.28mJ (off)
RoHS Status ROHS3 Compliant

IXGH64N60A3 Документы

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