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IXGH64N60B3 Технические параметры
IXYS IXGH64N60B3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 24 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Number of Elements | 1 Element | |
| Test Conditions | 480V, 50A, 3 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | GenX3™ | |
| Published | 2008 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Max Power Dissipation | 460W | |
| Terminal Position | SINGLE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.8V | |
| Turn On Time | 64 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A | |
| Turn Off Time-Nom (toff) | 326 ns | |
| IGBT Type | PT | |
| Gate Charge | 168nC | |
| Current - Collector Pulsed (Icm) | 400A | |
| Td (on/off) @ 25°C | 25ns/138ns | |
| Switching Energy | 1.5mJ (on), 1mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 5V | |
| Fall Time-Max (tf) | 150ns | |
| RoHS Status | ROHS3 Compliant |
IXGH64N60B3 Документы
- DatasheetsIXGx64N60B3
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