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IXGK120N120B3 Технические параметры

IXYS  IXGK120N120B3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 100A, 2 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series GenX3™
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 830W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 830W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 200A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 122 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 100A
Turn Off Time-Nom (toff) 885 ns
IGBT Type PT
Gate Charge 470nC
Current - Collector Pulsed (Icm) 370A
Td (on/off) @ 25°C 36ns/275ns
Switching Energy 5.5mJ (on), 5.8mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant

IXGK120N120B3 Документы

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