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IXGK120N60B Технические параметры

IXYS  IXGK120N60B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Weight 10.000011g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 100A, 2.4 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFAST™
Published 2004
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Max Power Dissipation 660W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*120N60
Свойство продукта Значение свойства
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 660W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 200A
Turn On Time 120 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 120A
Turn Off Time-Nom (toff) 540 ns
IGBT Type PT
Gate Charge 350nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 60ns/200ns
Switching Energy 2.4mJ (on), 5.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 280ns
RoHS Status RoHS Compliant

IXGK120N60B Документы

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