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IXGK120N60B3 Технические параметры
IXYS IXGK120N60B3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 1 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | TO-264-3, TO-264AA | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 280A | |
| Number of Elements | 1 Element | |
| Test Conditions | 480V, 100A, 2 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Series | GenX3™ | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Number of Terminations | 3Terminations | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 780W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Reverse Recovery Time | 87ns | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Power Dissipation-Max (Abs) | 780W | |
| Turn On Time | 123 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 100A | |
| Turn Off Time-Nom (toff) | 520 ns | |
| IGBT Type | PT | |
| Gate Charge | 465nC | |
| Current - Collector Pulsed (Icm) | 600A | |
| Td (on/off) @ 25°C | 40ns/227ns | |
| Switching Energy | 2.9mJ (on), 3.5mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 5V | |
| RoHS Status | RoHS Compliant |
Индекс :
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