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IXGR32N90B2D1 Технические параметры
IXYS IXGR32N90B2D1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 26 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | ISOPLUS247™ | |
| Number of Pins | 247Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 900V | |
| Number of Elements | 1 Element | |
| Test Conditions | 720V, 32A, 5 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | HiPerFAST™ | |
| Published | 2005 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | TIN SILVER COPPER | |
| Max Power Dissipation | 160W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | IXG*32N90 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Case Connection | ISOLATED | |
| Input Type | Standard | |
| Power - Max | 160W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 900V | |
| Max Collector Current | 47A | |
| Reverse Recovery Time | 190 ns | |
| Turn On Time | 42 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 32A | |
| Turn Off Time-Nom (toff) | 690 ns | |
| IGBT Type | PT | |
| Gate Charge | 89nC | |
| Current - Collector Pulsed (Icm) | 200A | |
| Td (on/off) @ 25°C | 20ns/260ns | |
| Switching Energy | 2.2mJ (off) | |
| RoHS Status | ROHS3 Compliant |
IXGR32N90B2D1 Документы
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