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IXGR35N120BD1 Технические параметры

IXYS  IXGR35N120BD1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 247Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 960V, 35A, 3 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number IXG*35N120
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Element Configuration Single
Case Connection ISOLATED
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 54A
Reverse Recovery Time 40 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 105 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 35A
Turn Off Time-Nom (toff) 780 ns
Gate Charge 140nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 40ns/270ns
Switching Energy 900μJ (on), 3.8mJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXGR35N120BD1 Документы

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