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IXGR35N120C Технические параметры

IXYS  IXGR35N120C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 960V, 35A, 4.7 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFAST™
Published 2001
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN LEAD
Max Power Dissipation 200W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number IXG*35N120
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Configuration SINGLE
Case Connection ISOLATED
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 70A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 86 ns
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 35A
Turn Off Time-Nom (toff) 480 ns
Gate Charge 170nC
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 50ns/150ns
Switching Energy 3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status RoHS Compliant
Просмотр сходства

IXGR35N120C Документы

IXGR35N120C brand manufacturers: IXYS, Anli stock, IXGR35N120C reference price.IXYS. IXGR35N120C parameters, IXGR35N120C Datasheet PDF and pin diagram description download.You can use the IXGR35N120C Transistors - IGBTs - Single, DSP Datesheet PDF, find IXGR35N120C pin diagram and circuit diagram and usage method of function,IXGR35N120C electronics tutorials.You can download from the Anli.