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IXGR50N160H1 Технические параметры

IXYS  IXGR50N160H1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.6kV
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 240W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection ISOLATED
Input Type Standard
Power - Max 240W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 75A
Reverse Recovery Time 230 ns
Voltage - Collector Emitter Breakdown (Max) 1600V
Turn On Time 192 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 50A
Turn Off Time-Nom (toff) 4840 ns
IGBT Type NPT
Gate Charge 137nC
Current - Collector Pulsed (Icm) 330A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status RoHS Compliant
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IXGR50N160H1 Документы

IXGR50N160H1 brand manufacturers: IXYS, Anli stock, IXGR50N160H1 reference price.IXYS. IXGR50N160H1 parameters, IXGR50N160H1 Datasheet PDF and pin diagram description download.You can use the IXGR50N160H1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IXGR50N160H1 pin diagram and circuit diagram and usage method of function,IXGR50N160H1 electronics tutorials.You can download from the Anli.