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IXGR50N60B Технические параметры

IXYS  IXGR50N60B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 247Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 50A, 2.7 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFAST™
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number IXG*50N60
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Element Configuration Single
Case Connection ISOLATED
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A
Turn Off Time-Nom (toff) 375 ns
Gate Charge 110nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 50ns/110ns
Switching Energy 3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status RoHS Compliant

IXGR50N60B Документы

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