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IXGR50N60B2D1 Технические параметры

IXYS  IXGR50N60B2D1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 40A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFAST™
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*50N60
Pin Count 3
Qualification Status Not Qualified
Polarity NPN
Element Configuration Single
Power Dissipation 200W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 65ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 68A
Reverse Recovery Time 35 ns
Turn On Time 43 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A
Turn Off Time-Nom (toff) 430 ns
Gate Charge 140nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 18ns/190ns
Switching Energy 550μJ (off)
REACH SVHC No SVHC
RoHS Status RoHS Compliant

IXGR50N60B2D1 Документы

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