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IXGR55N120A3H1 Технические параметры
IXYS IXGR55N120A3H1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 8 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 1 Element | |
| Test Conditions | 960V, 55A, 3 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | GenX3™ | |
| Published | 2009 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | TIN SILVER COPPER | |
| Additional Feature | ULTRA FAST, LOW CONDUCTION LOSS | |
| Max Power Dissipation | 200W | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Case Connection | ISOLATED | |
| Input Type | Standard | |
| Power - Max | 200W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 2.35V | |
| Max Collector Current | 70A | |
| Reverse Recovery Time | 200 ns | |
| JEDEC-95 Code | TO-247AD | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Turn On Time | 70 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 55A | |
| Turn Off Time-Nom (toff) | 1253 ns | |
| IGBT Type | PT | |
| Gate Charge | 185nC | |
| Current - Collector Pulsed (Icm) | 330A | |
| Td (on/off) @ 25°C | 23ns/365ns | |
| Switching Energy | 5.1mJ (on), 13.3mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 5V | |
| RoHS Status | ROHS3 Compliant |
IXGR55N120A3H1 Документы
- DatasheetsIXGR55N120A3H1
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