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IXGT40N120B2D1 Технические параметры
IXYS IXGT40N120B2D1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | |
| Number of Pins | 3Pins | |
| Weight | 4.500005g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 1 Element | |
| Test Conditions | 960V, 40A, 2 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2008 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Terminal Finish | PURE TIN | |
| Max Power Dissipation | 380W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | IXG*40N120 | |
| Pin Count | 4 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 380W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 75A | |
| Reverse Recovery Time | 100 ns | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Turn On Time | 79 ns | |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 40A | |
| Turn Off Time-Nom (toff) | 770 ns | |
| IGBT Type | PT | |
| Gate Charge | 138nC | |
| Current - Collector Pulsed (Icm) | 200A | |
| Td (on/off) @ 25°C | 21ns/290ns | |
| Switching Energy | 4.5mJ (on), 3mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 5V | |
| Fall Time-Max (tf) | 270ns | |
| Height | 5.1mm | |
| Length | 16.05mm | |
| Width | 14mm | |
| RoHS Status | ROHS3 Compliant |
IXGT40N120B2D1 Документы
- DatasheetsIXG(H,T)40N120B2D1
Индекс :
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