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IXGT4N250C Технические параметры

IXYS  IXGT4N250C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 2.5kV
Number of Elements 1 Element
Test Conditions 1250V, 4A, 20 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 150W
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code unknown
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 150W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 6V
Max Collector Current 13A
Voltage - Collector Emitter Breakdown (Max) 2500V
Vce(on) (Max) @ Vge, Ic 6V @ 15V, 4A
Turn Off Time-Nom (toff) 471 ns
IGBT Type NPT
Gate Charge 57nC
Current - Collector Pulsed (Icm) 46A
Td (on/off) @ 25°C -/350ns
Switching Energy 360μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant

IXGT4N250C Документы

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