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IXGX32N170AH1 Технические параметры

IXYS  IXGX32N170AH1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.7kV
Number of Elements 1 Element
Test Conditions 850V, 32A, 2.7 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 350W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number IXG*32N170
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 350W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 32A
Reverse Recovery Time 150 ns
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 74 ns
Vce(on) (Max) @ Vge, Ic 5V @ 15V, 21A
Turn Off Time-Nom (toff) 362 ns
IGBT Type NPT
Gate Charge 157nC
Current - Collector Pulsed (Icm) 110A
Td (on/off) @ 25°C 27ns/270ns
Switching Energy 4.1mJ (on), 1.25mJ (off)
RoHS Status RoHS Compliant
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IXGX32N170AH1 Документы

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