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IXGX35N120BD1 Технические параметры

IXYS  IXGX35N120BD1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 25 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 960V, 35A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFAST™
Published 2002
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 350W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*35N120
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 350W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 70A
Reverse Recovery Time 60 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 86 ns
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 35A
Turn Off Time-Nom (toff) 660 ns
Gate Charge 170nC
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 50ns/180ns
Switching Energy 3.8mJ (off)
RoHS Status ROHS3 Compliant
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IXGX35N120BD1 Документы

IXGX35N120BD1 brand manufacturers: IXYS, Anli stock, IXGX35N120BD1 reference price.IXYS. IXGX35N120BD1 parameters, IXGX35N120BD1 Datasheet PDF and pin diagram description download.You can use the IXGX35N120BD1 Transistors - IGBTs - Single, DSP Datesheet PDF, find IXGX35N120BD1 pin diagram and circuit diagram and usage method of function,IXGX35N120BD1 electronics tutorials.You can download from the Anli.