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IXGX35N120CD1 Технические параметры

IXYS  IXGX35N120CD1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 960V, 35A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFAST™
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Max Power Dissipation 350W
Terminal Position SINGLE
Base Part Number IXG*35N120
Свойство продукта Значение свойства
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 350W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 70A
Reverse Recovery Time 60 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 86 ns
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 35A
Turn Off Time-Nom (toff) 480 ns
Gate Charge 170nC
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 50ns/150ns
Switching Energy 3mJ (off)
RoHS Status RoHS Compliant

IXGX35N120CD1 Документы

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