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IXKP10N60C5M Технические параметры

IXYS  IXKP10N60C5M technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5.4A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™
Published 2009
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 31W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 385m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 340μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 5.4A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.385Ohm
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 225 mJ
FET Feature Super Junction
RoHS Status RoHS Compliant

IXKP10N60C5M Документы

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