Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
IXYS IXKP13N60C5 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 13A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | CoolMOS™ | |
| Published | 2009 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 130W | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 6.6A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 440μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 100V | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | 13A | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.3Ohm | |
| Drain to Source Breakdown Voltage | 600V | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| FET Feature | Super Junction | |
| RoHS Status | ROHS3 Compliant |