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IXTA180N10T7 Технические параметры

IXYS  IXTA180N10T7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 180A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 480W Tc
Turn Off Delay Time 42 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMV™
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 6.4MOhm
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSFM-G6
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 480W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 151nC @ 10V
Rise Time 54ns
Vgs (Max) ±30V
Fall Time (Typ) 31 ns
Continuous Drain Current (ID) 180A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 450A
Avalanche Energy Rating (Eas) 750 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXTA180N10T7 Документы

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