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IXTA200N055T2 Технические параметры

IXYS  IXTA200N055T2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 200A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 360W Tc
Turn Off Delay Time 49 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchT2™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 109nC @ 10V
Rise Time 22ns
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Continuous Drain Current (ID) 200A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0042Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 500A
Avalanche Energy Rating (Eas) 600 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXTA200N055T2 Документы

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