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IXTA260N055T2 Технические параметры

IXYS  IXTA260N055T2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 260A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 480W Tc
Operating Temperature -55°C~175°C TJ
Series TrenchT2™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 260A
Drain-source On Resistance-Max 0.0033Ohm
Pulsed Drain Current-Max (IDM) 780A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 600 mJ
RoHS Status Non-RoHS Compliant

IXTA260N055T2 Документы

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