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IXTA32P05T Технические параметры

IXYS  IXTA32P05T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 32A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 83W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series TrenchP™
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 39MOhm
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Drain to Source Voltage (Vdss) 50V
Vgs (Max) ±15V
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage -50V
Pulsed Drain Current-Max (IDM) 110A
Avalanche Energy Rating (Eas) 200 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXTA32P05T Документы

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