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IXTA3N120 Технические параметры

IXYS  IXTA3N120 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Supplier Device Package TO-263 (IXTA)
Current - Continuous Drain (Id) @ 25℃ 3A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 200W Tc
Turn Off Delay Time 32 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 4.5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 1.2kV
Свойство продукта Значение свойства
Current Rating 3A
Element Configuration Single
Power Dissipation 150W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 1200V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1.1kV
Input Capacitance 1.35nF
Drain to Source Resistance 4.5Ohm
Rds On Max 4.5 Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXTA3N120 Документы

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