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IXTA80N10T Технические параметры

IXYS  IXTA80N10T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 230W Tc
Turn Off Delay Time 40 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMV™
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Свойство продукта Значение свойства
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3040pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 54ns
Vgs (Max) ±20V
Fall Time (Typ) 48 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 400 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IXTA80N10T Документы

IXTA80N10T brand manufacturers: IXYS, Anli stock, IXTA80N10T reference price.IXYS. IXTA80N10T parameters, IXTA80N10T Datasheet PDF and pin diagram description download.You can use the IXTA80N10T Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTA80N10T pin diagram and circuit diagram and usage method of function,IXTA80N10T electronics tutorials.You can download from the Anli.