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IXTA88N085T Технические параметры

IXYS  IXTA88N085T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 88A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 230W Tc
Turn Off Delay Time 42 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMV™
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Rise Time 54ns
Vgs (Max) ±20V
Fall Time (Typ) 29 ns
Continuous Drain Current (ID) 88A
Drain-source On Resistance-Max 0.011Ohm
Drain to Source Breakdown Voltage 85V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 500 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free

IXTA88N085T Документы

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