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IXTA8N70X2 Технические параметры

IXYS  IXTA8N70X2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Package / Case TO-263-3
RoHS Details
Mounting Styles SMD/SMT
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 700 V
Id - Continuous Drain Current 8 A
Rds On - Drain-Source Resistance 500 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 12 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 150 W
Channel Mode Enhancement
Tradename HiPerFET
Свойство продукта Значение свойства
Forward Transconductance - Min 4.8 S
Factory Pack QuantityFactory Pack Quantity 50
Typical Turn-Off Delay Time 53 ns
Typical Turn-On Delay Time 24 ns
Unit Weight 0.139332 oz
Package Description ,
Manufacturer Part Number IXTA8N70X2
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Risk Rank 5.37
Series X2-Class
Packaging Tube
Reach Compliance Code unknown
Configuration Single
Number of Channels 1 ChannelChannel
Rise Time 28 ns
Transistor Type 1 N-Channel
IXTA8N70X2 brand manufacturers: IXYS, Anli stock, IXTA8N70X2 reference price.IXYS. IXTA8N70X2 parameters, IXTA8N70X2 Datasheet PDF and pin diagram description download.You can use the IXTA8N70X2 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTA8N70X2 pin diagram and circuit diagram and usage method of function,IXTA8N70X2 electronics tutorials.You can download from the Anli.