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IXTH110N10L2 Технические параметры

IXYS  IXTH110N10L2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 110A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Operating Temperature (Max.) 150°C
Power Dissipation (Max) 600W Tc
Packaging Bulk
Series Linear L2™
Published 2010
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Свойство продукта Значение свойства
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Continuous Drain Current (ID) 110A
Drain-source On Resistance-Max 0.018Ohm
DS Breakdown Voltage-Min 100V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IXTH110N10L2 Документы

IXTH110N10L2 brand manufacturers: IXYS, Anli stock, IXTH110N10L2 reference price.IXYS. IXTH110N10L2 parameters, IXTH110N10L2 Datasheet PDF and pin diagram description download.You can use the IXTH110N10L2 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTH110N10L2 pin diagram and circuit diagram and usage method of function,IXTH110N10L2 electronics tutorials.You can download from the Anli.