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IXTH110N25T Технические параметры

IXYS  IXTH110N25T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 110A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 694W Tc
Turn Off Delay Time 60 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 24MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Свойство продукта Значение свойства
Additional Feature AVALANCHE RATED
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 694W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 157nC @ 10V
Rise Time 27ns
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Continuous Drain Current (ID) 110A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IXTH110N25T Документы

IXTH110N25T brand manufacturers: IXYS, Anli stock, IXTH110N25T reference price.IXYS. IXTH110N25T parameters, IXTH110N25T Datasheet PDF and pin diagram description download.You can use the IXTH110N25T Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTH110N25T pin diagram and circuit diagram and usage method of function,IXTH110N25T electronics tutorials.You can download from the Anli.