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IXTH11P50 Технические параметры

IXYS  IXTH11P50 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 11A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 35 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Pbfree Code yes
Part Status Active
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 750MOhm
Additional Feature AVALANCHE RATED
Voltage - Rated DC -500V
Current Rating -11A
Свойство продукта Значение свойства
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 11A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -500V
Pulsed Drain Current-Max (IDM) 44A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IXTH11P50 Документы

IXTH11P50 brand manufacturers: IXYS, Anli stock, IXTH11P50 reference price.IXYS. IXTH11P50 parameters, IXTH11P50 Datasheet PDF and pin diagram description download.You can use the IXTH11P50 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTH11P50 pin diagram and circuit diagram and usage method of function,IXTH11P50 electronics tutorials.You can download from the Anli.