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IXTH12N100Q Технические параметры

IXYS  IXTH12N100Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Current - Continuous Drain (Id) @ 25℃ 12A Tc
Packaging Tube
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 300W
Element Configuration Single
Power Dissipation 300W
FET Type N-Channel
Drain to Source Voltage (Vdss) 1000V
Continuous Drain Current (ID) 12A
Drain to Source Breakdown Voltage 1kV
Drain to Source Resistance 1.05Ohm
RoHS Status ROHS3 Compliant
Просмотр сходства
IXTH12N100Q brand manufacturers: IXYS, Anli stock, IXTH12N100Q reference price.IXYS. IXTH12N100Q parameters, IXTH12N100Q Datasheet PDF and pin diagram description download.You can use the IXTH12N100Q Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTH12N100Q pin diagram and circuit diagram and usage method of function,IXTH12N100Q electronics tutorials.You can download from the Anli.