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IXTH12N150 Технические параметры

IXYS  IXTH12N150 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 890W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 890W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Drain to Source Voltage (Vdss) 1500V
Vgs (Max) ±30V
Continuous Drain Current (ID) 12A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 2Ohm
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 750 mJ
RoHS Status ROHS3 Compliant
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IXTH12N150 Документы

IXTH12N150 brand manufacturers: IXYS, Anli stock, IXTH12N150 reference price.IXYS. IXTH12N150 parameters, IXTH12N150 Datasheet PDF and pin diagram description download.You can use the IXTH12N150 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTH12N150 pin diagram and circuit diagram and usage method of function,IXTH12N150 electronics tutorials.You can download from the Anli.