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IXYS IXTH16P60P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | IXYS | |
Factory Lead Time | 28 Weeks | |
Mount | Through Hole | |
Mounting Type | Through Hole | |
Package / Case | TO-247-3 | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 16A Tc | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 460W Tc | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tube | |
Series | PolarP™ | |
Published | 2008 | |
JESD-609 Code | e1 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 2Terminations | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Additional Feature | AVALANCHE RATED | |
Terminal Position | SINGLE |
Свойство продукта | Значение свойства | |
---|---|---|
Terminal Form | GULL WING | |
Pin Count | 4 | |
JESD-30 Code | R-PSSO-G2 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 460W | |
Case Connection | DRAIN | |
FET Type | P-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 720m Ω @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 5120pF @ 25V | |
Gate Charge (Qg) (Max) @ Vgs | 92nC @ 10V | |
Drain to Source Voltage (Vdss) | 600V | |
Vgs (Max) | ±20V | |
Continuous Drain Current (ID) | 16A | |
JEDEC-95 Code | TO-268AA | |
Drain-source On Resistance-Max | 0.72Ohm | |
Pulsed Drain Current-Max (IDM) | 48A | |
DS Breakdown Voltage-Min | 600V | |
Avalanche Energy Rating (Eas) | 2500 mJ | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant |