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IXTH3N150 Технические параметры

IXYS  IXTH3N150 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 250W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Свойство продукта Значение свойства
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.3 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1375pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 38.6nC @ 10V
Drain to Source Voltage (Vdss) 1500V
Vgs (Max) ±30V
Continuous Drain Current (ID) 3A
JEDEC-95 Code TO-247AD
Drain Current-Max (Abs) (ID) 3A
Pulsed Drain Current-Max (IDM) 9A
DS Breakdown Voltage-Min 1500V
Avalanche Energy Rating (Eas) 250 mJ
RoHS Status ROHS3 Compliant

IXTH3N150 Документы

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