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IXTH4N150 Технические параметры

IXYS  IXTH4N150 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 3 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 4A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 280W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1576pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 44.5nC @ 10V
Drain to Source Voltage (Vdss) 1500V
Vgs (Max) ±30V
Continuous Drain Current (ID) 4A
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 6Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 1500V
Avalanche Energy Rating (Eas) 350 mJ
RoHS Status ROHS3 Compliant
Просмотр сходства
IXTH4N150 brand manufacturers: IXYS, Anli stock, IXTH4N150 reference price.IXYS. IXTH4N150 parameters, IXTH4N150 Datasheet PDF and pin diagram description download.You can use the IXTH4N150 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTH4N150 pin diagram and circuit diagram and usage method of function,IXTH4N150 electronics tutorials.You can download from the Anli.