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IXTH67N10 Технические параметры

IXYS  IXTH67N10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 67A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MegaMOS™
Published 2003
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 25MOhm
Voltage - Rated DC 100V
Свойство продукта Значение свойства
Current Rating 67A
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 33.5A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Rise Time 60ns
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 67A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 268A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IXTH67N10 Документы

IXTH67N10 brand manufacturers: IXYS, Anli stock, IXTH67N10 reference price.IXYS. IXTH67N10 parameters, IXTH67N10 Datasheet PDF and pin diagram description download.You can use the IXTH67N10 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTH67N10 pin diagram and circuit diagram and usage method of function,IXTH67N10 electronics tutorials.You can download from the Anli.