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IXTH75N10 Технические параметры

IXYS  IXTH75N10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 75A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MegaMOS™
Published 2003
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 20mOhm
Voltage - Rated DC 100V
Current Rating 75A
Свойство продукта Значение свойства
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 37.5A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Rise Time 60ns
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 4V
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Nominal Vgs 4 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IXTH75N10 Документы

IXTH75N10 brand manufacturers: IXYS, Anli stock, IXTH75N10 reference price.IXYS. IXTH75N10 parameters, IXTH75N10 Datasheet PDF and pin diagram description download.You can use the IXTH75N10 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTH75N10 pin diagram and circuit diagram and usage method of function,IXTH75N10 electronics tutorials.You can download from the Anli.