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IXTH80N65X2 Технические параметры
IXYS IXTH80N65X2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 15 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Manufacturer Package Identifier | IXTH80N65X2 | |
| Current - Continuous Drain (Id) @ 25℃ | 80A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 890W Tc | |
| Turn Off Delay Time | 72 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2015 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Number of Channels | 1Channel | |
| Power Dissipation | 890W | |
| Turn On Delay Time | 36 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 40A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 7753pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 144nC @ 10V | |
| Vgs (Max) | ±30V | |
| Continuous Drain Current (ID) | 80A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 650V | |
| Max Junction Temperature (Tj) | 150°C | |
| Height | 25.66mm | |
| RoHS Status | ROHS3 Compliant |
IXTH80N65X2 Документы
- DatasheetsIXTH80N65X2
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