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IXTH86N25T Технические параметры
IXYS IXTH86N25T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 30 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 86A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 540W Ta | |
| Operating Temperature | -55°C~150°C TJ | |
| Published | 2012 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Additional Feature | AVALANCHE RATED | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 37m Ω @ 43A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 5330pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V | |
| Drain to Source Voltage (Vdss) | 250V | |
| Vgs (Max) | ±30V | |
| JEDEC-95 Code | TO-247AD | |
| Drain Current-Max (Abs) (ID) | 86A | |
| Drain-source On Resistance-Max | 0.037Ohm | |
| Pulsed Drain Current-Max (IDM) | 190A | |
| DS Breakdown Voltage-Min | 250V | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| RoHS Status | RoHS Compliant |
Индекс :
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