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IXTH88N30P Технические параметры

IXYS  IXTH88N30P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 35 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 88A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 600W Tc
Turn Off Delay Time 96 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PolarHT™
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 40MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 600W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 44A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 24ns
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 88A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 300V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 2000 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IXTH88N30P Документы

IXTH88N30P brand manufacturers: IXYS, Anli stock, IXTH88N30P reference price.IXYS. IXTH88N30P parameters, IXTH88N30P Datasheet PDF and pin diagram description download.You can use the IXTH88N30P Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTH88N30P pin diagram and circuit diagram and usage method of function,IXTH88N30P electronics tutorials.You can download from the Anli.