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IXTK110N20L2 Технические параметры

IXYS  IXTK110N20L2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 110A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 960W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series Linear L2™
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Свойство продукта Значение свойства
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 960W
Case Connection DRAIN
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 24m Ω @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 500nC @ 10V
Drain to Source Voltage (Vdss) 200V
Vgs (Max) ±20V
Continuous Drain Current (ID) 110A
Drain-source On Resistance-Max 0.024Ohm
Pulsed Drain Current-Max (IDM) 275A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 5000 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

IXTK110N20L2 Документы

IXTK110N20L2 brand manufacturers: IXYS, Anli stock, IXTK110N20L2 reference price.IXYS. IXTK110N20L2 parameters, IXTK110N20L2 Datasheet PDF and pin diagram description download.You can use the IXTK110N20L2 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTK110N20L2 pin diagram and circuit diagram and usage method of function,IXTK110N20L2 electronics tutorials.You can download from the Anli.