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IXTK17N120L Технические параметры

IXYS  IXTK17N120L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 17A Tc
Drive Voltage (Max Rds On, Min Rds On) 20V
Number of Elements 1 Element
Power Dissipation (Max) 700W Tc
Turn Off Delay Time 75 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Resistance 900MOhm
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700W
Case Connection DRAIN
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 8.5A, 20V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 155nC @ 15V
Rise Time 39ns
Drain to Source Voltage (Vdss) 1200V
Vgs (Max) ±30V
Fall Time (Typ) 63 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1.2kV
Avalanche Energy Rating (Eas) 2500 mJ
Height 26.16mm
Length 19.96mm
Width 5.13mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXTK17N120L Документы

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