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IXTK210P10T Технические параметры

IXYS  IXTK210P10T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Surface Mount NO
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature (Max.) 150°C
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
JEDEC-95 Code TO-264AA
Drain Current-Max (Abs) (ID) 210A
Drain-source On Resistance-Max 0.0075Ohm
Pulsed Drain Current-Max (IDM) 800A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 3000 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 1040W
RoHS Status ROHS3 Compliant
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IXTK210P10T Документы

IXTK210P10T brand manufacturers: IXYS, Anli stock, IXTK210P10T reference price.IXYS. IXTK210P10T parameters, IXTK210P10T Datasheet PDF and pin diagram description download.You can use the IXTK210P10T Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXTK210P10T pin diagram and circuit diagram and usage method of function,IXTK210P10T electronics tutorials.You can download from the Anli.